Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 55V 260A (Tc) 480W (Tc) сквозное отверстие TO-247 (IXTH)

Подробное описание

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	260A (Tc)
drain to source voltage (vdss)	55V

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 55V 260A (Tc) 480W (Tc) сквозное отверстие TO-247 (IXTH)

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	260A (Tc)
drain to source voltage (vdss)	55V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	140nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	10800pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube
package / case	TO-247-3
power dissipation (max)	480W (Tc)
rds on (max) @ id, vgs	3.3mOhm @ 50A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	TrenchT2в„ў ->
supplier device package	TO-247 (IXTH)
technology	MOSFET (Metal Oxide)
vgs (max)	В±20V
vgs(th) (max) @ id	4V @ 250ВµA

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IXTH260N055T2