IXTA3N100D2HV, MOSFET MSFT N-CH DEPL MODE-D2

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Артикул: IXTA3N100D2HV
Semiconductors\Discrete Semiconductors\Transistors\MOSFETD2 Series N-Channel Depletion Mode Power MOSFETs IXYS D2 Series 100V-1700V N-Channel Depletion Mode Power MOSFETs are depletion mode devices that operate in a "normally-on" mode, requiring zero turn-on voltage at the gate terminal. The series provides blocking voltages up to 1700V and low drain-to-source resistances to provide simplified control and reduced power dissipation in systems that are continuously "on" (emergency or burglar alarms, for...
Вес и габариты
channel mode:Depletion
configuration:Single
factory pack quantity: factory pack quantity:50
1 410
+
Бонус: 28.2 !
Бонусная программа
Итого: 1 410
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Semiconductors\Discrete Semiconductors\Transistors\MOSFETD2 Series N-Channel Depletion Mode Power MOSFETs IXYS D2 Series 100V-1700V N-Channel Depletion Mode Power MOSFETs are depletion mode devices that operate in a "normally-on" mode, requiring zero turn-on voltage at the gate terminal. The series provides blocking voltages up to 1700V and low drain-to-source resistances to provide simplified control and reduced power dissipation in systems that are continuously "on" (emergency or burglar alarms, for instance).
Вес и габариты
channel mode:Depletion
configuration:Single
factory pack quantity: factory pack quantity:50
fall time:40 ns
id - continuous drain current:3 A
manufacturer:IXYS
maximum operating temperature:+150 C
minimum operating temperature:-55 C
mounting style:SMD/SMT
number of channels:1 Channel
package/case:TO-263HV-3
packaging:Tube
pd - power dissipation:125 W
product category:MOSFET
product type:MOSFET
qg - gate charge:37.5 nC
rds on - drain-source resistance:6 Ohms
rise time:67 ns
subcategory:MOSFETs
technology:Si
transistor polarity:N-Channel
transistor type:1 N-Channel
typical turn-off delay time:34 ns
typical turn-on delay time:27 ns
vds - drain-source breakdown voltage:1 kV
вес, г2.5
vgs - gate-source voltage:-20 V, +20 V
vgs th - gate-source threshold voltage:4.5 V
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