Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 500 В 1,6 A (Tc) 100 Вт (Tc) для поверхностного монтажа TO-263 (IXTA)

Подробное описание

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	1.6A (Tc)
drain to source voltage (vdss)	500V

790 ₽

– +

Бонус: 15.8 !

Бонусная программа

Итого: 790 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 500 В 1,6 A (Tc) 100 Вт (Tc) для поверхностного монтажа TO-263 (IXTA)

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	1.6A (Tc)
drain to source voltage (vdss)	500V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet feature	Depletion Mode
fet type	N-Channel
gate charge (qg) (max) @ vgs	23.7nC @ 5V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	645pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-263-3, DВІPak (2 Leads + Tab), TO-263AB
power dissipation (max)	100W (Tc)
rds on (max) @ id, vgs	2.3Ohm @ 800mA, 0V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	TO-263 (IXTA)
technology	MOSFET (Metal Oxide)
vgs (max)	В±20V

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IXTA1R6N50D2