Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleP-канал 50V 140A (Tc) 298W (Tc) Поверхностный монтаж TO-263 (IXTA)

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Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	140A (Tc)
drain to source voltage (vdss)	50V

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleP-канал 50V 140A (Tc) 298W (Tc) Поверхностный монтаж TO-263 (IXTA)

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	140A (Tc)
drain to source voltage (vdss)	50V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	P-Channel
gate charge (qg) (max) @ vgs	200nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	13500pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-263-3, DВІPak (2 Leads + Tab), TO-263AB
power dissipation (max)	298W (Tc)
rds on (max) @ id, vgs	9mOhm @ 70A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	TrenchPв„ў ->
supplier device package	TO-263 (IXTA)
technology	MOSFET (Metal Oxide)
vgs (max)	В±15V
vgs(th) (max) @ id	4V @ 250ВµA

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IXTA140P05T