Name: IXTA110N055T2, Транзистор MOSFET N-CH 55В 110A [TO-263]
SKU: IXTA110N055T2

N-канал 55V 110A (Tc) 180W (Tc) Поверхностный монтаж TO-263 (IXTA)

Подробное описание

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	110A (Tc)
drain to source voltage (vdss)	55V

1 000 ₽

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Бонус: 20 !

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Итого: 1 000 ₽

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N-канал 55V 110A (Tc) 180W (Tc) Поверхностный монтаж TO-263 (IXTA)

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	110A (Tc)
drain to source voltage (vdss)	55V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	57nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	3060pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube
package / case	TO-263-3, DВІPak (2 Leads + Tab), TO-263AB
power dissipation (max)	180W (Tc)
rds on (max) @ id, vgs	6.6mOhm @ 25A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	TrenchT2в„ў ->
supplier device package	TO-263 (IXTA)
technology	MOSFET (Metal Oxide)
вес, г	2.5
vgs (max)	В±20V
vgs(th) (max) @ id	4V @ 250ВµA

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