Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-Channel 600V 64A (Tc) 1130W (Tc) Through Hole PLUS247в„ў-3

Подробное описание

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	64A (Tc)
drain to source voltage (vdss)	600V

3 310 ₽

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Бонус: 66.2 !

Бонусная программа

Итого: 3 310 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-Channel 600V 64A (Tc) 1130W (Tc) Through Hole PLUS247в„ў-3

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	64A (Tc)
drain to source voltage (vdss)	600V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	145nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	9900pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-247-3
power dissipation (max)	1130W (Tc)
rds on (max) @ id, vgs	95mOhm @ 32A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	HiPerFETв„ў, Polar3в„ў ->
supplier device package	PLUS247в„ў-3
technology	MOSFET (Metal Oxide)
vgs (max)	В±30V
vgs(th) (max) @ id	5V @ 4mA

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