IXFX20N120P
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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-Channel 1200V 20A (Tc) 780W (Tc) Through Hole PLUS247в„ў-3
| Вес и габариты | |
| california prop 65 | Warning Information |
| channel mode: | Enhancement |
| configuration: | Single |
| current - continuous drain (id) @ 25в°c | 20A (Tc) |
| drain to source voltage (vdss) | 1200V |
| drive voltage (max rds on, min rds on) | 10V |
| eccn | EAR99 |
| factory pack quantity: factory pack quantity: | 30 |
| fall time: | 70 ns |
| fet type | N-Channel |
| gate charge (qg) (max) @ vgs | 193nC @ 10V |
| htsus | 8541.29.0095 |
| id - continuous drain current: | 20 A |
| input capacitance (ciss) (max) @ vds | 11100pF @ 25V |
| manufacturer: | IXYS |
| maximum operating temperature: | +150 C |
| minimum operating temperature: | -55 C |
| moisture sensitivity level (msl) | 1 (Unlimited) |
| mounting style: | Through Hole |
| mounting type | Through Hole |
| number of channels: | 1 Channel |
| operating temperature | -55В°C ~ 150В°C (TJ) |
| package | Tube |
| package / case | TO-247-3 |
| package/case: | TO-247-3 |
| packaging: | Tube |
| pd - power dissipation: | 780 W |
| power dissipation (max) | 780W (Tc) |
| product category: | MOSFET |
| product type: | MOSFET |
| qg - gate charge: | 193 nC |
| rds on - drain-source resistance: | 570 mOhms |
| rds on (max) @ id, vgs | 570mOhm @ 10A, 10V |
| reach status | REACH Unaffected |
| rise time: | 45 ns |
| rohs status | ROHS3 Compliant |
| series | HiPerFETв„ў, PolarP2в„ў -> |
| series: | IXFX20N120 |
| subcategory: | MOSFETs |
| supplier device package | PLUS247в„ў-3 |
| technology | MOSFET (Metal Oxide) |
| technology: | Si |
| tradename: | HiPerFET |
| transistor polarity: | N-Channel |
| transistor type: | 1 N-Channel |
| typical turn-off delay time: | 72 ns |
| typical turn-on delay time: | 49 ns |
| vds - drain-source breakdown voltage: | 1.2 kV |
| vgs - gate-source voltage: | -30 V, +30 V |
| vgs (max) | В±30V |
| vgs th - gate-source threshold voltage: | 3.5 V |
| vgs(th) (max) @ id | 6.5V @ 1mA |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26