Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-Channel 650V 120A (Tc) 1250W (Tc) Through Hole PLUS247в„ў-3

Подробное описание

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	120A (Tc)
drain to source voltage (vdss)	650V

5 750 ₽

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Бонус: 115 !

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Итого: 5 750 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-Channel 650V 120A (Tc) 1250W (Tc) Through Hole PLUS247в„ў-3

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	120A (Tc)
drain to source voltage (vdss)	650V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	225nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	15500pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-247-3
power dissipation (max)	1250W (Tc)
rds on (max) @ id, vgs	24mOhm @ 60A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	HiPerFETв„ў ->
supplier device package	PLUS247в„ў-3
technology	MOSFET (Metal Oxide)
vgs (max)	В±30V
vgs(th) (max) @ id	5.5V @ 8mA

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IXFX120N65X2