Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 250V 120A (Tc) 520W (Tc) поверхностный монтаж TO-268HV

Подробное описание

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	120A (Tc)
drain to source voltage (vdss)	250V

3 420 ₽

– +

Бонус: 68.4 !

Бонусная программа

Итого: 3 420 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 250V 120A (Tc) 520W (Tc) поверхностный монтаж TO-268HV

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	120A (Tc)
drain to source voltage (vdss)	250V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	122nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	7870pF @ 25V
moisture sensitivity level (msl)	3 (168 Hours)
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-268-3, DВіPak (2 Leads + Tab), TO-268AA
power dissipation (max)	520W (Tc)
rds on (max) @ id, vgs	12mOhm @ 60A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	HiPerFETв„ў ->
supplier device package	TO-268HV
technology	MOSFET (Metal Oxide)
vgs (max)	В±20V
vgs(th) (max) @ id	4.5V @ 4mA

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