Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 600V 22A (Tc) 500W (Tc) сквозное отверстие TO-220AB

Подробное описание

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	22A (Tc)
drain to source voltage (vdss)	600V

1 370 ₽

– +

Бонус: 27.4 !

Бонусная программа

Итого: 1 370 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 600V 22A (Tc) 500W (Tc) сквозное отверстие TO-220AB

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	22A (Tc)
drain to source voltage (vdss)	600V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	38nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	2600pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-220-3
power dissipation (max)	500W (Tc)
rds on (max) @ id, vgs	360mOhm @ 11A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	HiPerFETв„ў, Polar3в„ў ->
supplier device package	TO-220AB
technology	MOSFET (Metal Oxide)
vgs (max)	В±30V
vgs(th) (max) @ id	5V @ 1.5mA

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IXFP22N60P3