Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-Channel 900V 56A (Tc) 1000W (Tc) Монтаж на шасси SOT-227B

Подробное описание

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	56A (Tc)
drain to source voltage (vdss)	900V

14 290 ₽

– +

Бонус: 285.8 !

Бонусная программа

Итого: 14 290 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-Channel 900V 56A (Tc) 1000W (Tc) Монтаж на шасси SOT-227B

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	56A (Tc)
drain to source voltage (vdss)	900V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	375nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	23000pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Chassis Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	SOT-227-4, miniBLOC
power dissipation (max)	1000W (Tc)
rds on (max) @ id, vgs	135mOhm @ 28A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	Polarв„ў ->
supplier device package	SOT-227B
technology	MOSFET (Metal Oxide)
vgs (max)	В±30V
vgs(th) (max) @ id	6.5V @ 3mA

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