Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 500 В 112A (Tc) 1500 Вт (Tc) Монтаж на шасси SOT-227B

Подробное описание

9 040 ₽

– +

Бонус: 180.8 !

Бонусная программа

Итого: 9 040 ₽

Купить

Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 500 В 112A (Tc) 1500 Вт (Tc) Монтаж на шасси SOT-227B

Вес и габариты
california prop 65	Warning Information
channel mode	Enhancement
channel type	N
current - continuous drain (id) @ 25в°c	112A (Tc)
drain to source voltage (vdss)	500V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	250nC @ 10V
height	9.6mm
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	18600pF @ 25V
length	38.23mm
maximum continuous drain current	112 A
maximum drain source resistance	39 mΩ
maximum drain source voltage	500 В
maximum gate source voltage	-30 V, +30 V
maximum gate threshold voltage	5V
maximum operating temperature	+150 °C
maximum power dissipation	1.5 kW
minimum operating temperature	-55 °C
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Chassis Mount
number of elements per chip	1
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	SOT-227-4, miniBLOC
package type	SOT-227B
pin count	4
power dissipation (max)	1500W (Tc)
rds on (max) @ id, vgs	39mOhm @ 66A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	HiPerFETв„ў, Polar3в„ў ->
supplier device package	SOT-227B
technology	MOSFET (Metal Oxide)
transistor configuration	Одинарный
transistor material	Si
typical gate charge @ vgs	250 nC @ 10 V
vgs (max)	В±30V
vgs(th) (max) @ id	5V @ 8mA
width	25.07mm

Отзывов нет

Кнопки

IXFN132N50P3