Name: IXFH80N65X2-4, Транзистор X2-Class HiPerFET N-канал, 80А, 650В [TO-247-4L]
SKU: IXFH80N65X2-4

N-канал 650V 80A (Tc) 890W (Tc) сквозное отверстие TO-247-4L

Подробное описание

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	80A (Tc)
drain to source voltage (vdss)	650V

1 330 ₽

– +

Бонус: 26.6 !

Бонусная программа

Итого: 1 330 ₽

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N-канал 650V 80A (Tc) 890W (Tc) сквозное отверстие TO-247-4L

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	80A (Tc)
drain to source voltage (vdss)	650V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	140nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	8300pF @ 25V
moisture sensitivity level (msl)	Not Applicable
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-247-4
power dissipation (max)	890W (Tc)
rds on (max) @ id, vgs	38mOhm @ 500mA, 10V
reach status	REACH Unaffected
series	HiPerFETв„ў ->
supplier device package	TO-247-4L
technology	MOSFET (Metal Oxide)
вес, г	8
vgs (max)	В±30V
vgs(th) (max) @ id	5V @ 4mA

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