Вес и габариты | |
channel mode | Enhancement |
configuration | Single |
factory pack quantity | 30 |
fall time | 27 ns |
forward transconductance - min | 32 S |
id - continuous drain current | 44 A |
manufacturer | IXYS |
maximum operating temperature | +150 C |
minimum operating temperature | -55 C |
mounting style | Through Hole |
number of channels | 1 Channel |
package / case | TO-247-3 |
packaging | Tube |
pd - power dissipation | 650 W |
product category | MOSFET |
product type | MOSFET |
rds on - drain-source resistance | 140 mOhms |
rise time | 29 ns |
series | IXFH44N50 |
subcategory | MOSFETs |
technology | Si |
tradename | HiPerFET |
transistor polarity | N-Channel |
transistor type | 1 N-Channel |
typical turn-off delay time | 85 ns |
typical turn-on delay time | 28 ns |
vds - drain-source breakdown voltage | 500 V |
вес, г | 6 |
vgs - gate-source voltage | 30 V |