| Вес и габариты | |
| channel mode | Enhancement |
| configuration | Single |
| factory pack quantity | 30 |
| fall time | 27 ns |
| forward transconductance - min | 32 S |
| id - continuous drain current | 44 A |
| manufacturer | IXYS |
| maximum operating temperature | +150 C |
| minimum operating temperature | -55 C |
| mounting style | Through Hole |
| number of channels | 1 Channel |
| package / case | TO-247-3 |
| packaging | Tube |
| pd - power dissipation | 650 W |
| product category | MOSFET |
| product type | MOSFET |
| rds on - drain-source resistance | 140 mOhms |
| rise time | 29 ns |
| series | IXFH44N50 |
| subcategory | MOSFETs |
| technology | Si |
| tradename | HiPerFET |
| transistor polarity | N-Channel |
| transistor type | 1 N-Channel |
| typical turn-off delay time | 85 ns |
| typical turn-on delay time | 28 ns |
| vds - drain-source breakdown voltage | 500 V |
| вес, г | 6 |
| vgs - gate-source voltage | 30 V |