Name: IXFH10N80P, Транзистор: N-MOSFET, полевой, 800В, 10А, 300Вт, TO247-3
SKU: IXFH10N80P

N-канал 800V 10A (Tc) 300W (Tc) сквозное отверстие TO-247AD (IXFH)

Подробное описание

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	10A (Tc)
drain to source voltage (vdss)	800V

810 ₽

– +

Бонус: 16.2 !

Бонусная программа

Итого: 810 ₽

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N-канал 800V 10A (Tc) 300W (Tc) сквозное отверстие TO-247AD (IXFH)

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	10A (Tc)
drain to source voltage (vdss)	800V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	40nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	2050pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-247-3
power dissipation (max)	300W (Tc)
rds on (max) @ id, vgs	1.1Ohm @ 5A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	HiPerFETв„ў, PolarHTв„ў ->
supplier device package	TO-247AD (IXFH)
technology	MOSFET (Metal Oxide)
вес, г	6
vgs (max)	В±30V
vgs(th) (max) @ id	5.5V @ 2.5mA

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