Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 1200 В, 6 А (Tc) 250 Вт (Tc), поверхностный монтаж TO-263 (IXFA)

Подробное описание

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	6A (Tc)
drain to source voltage (vdss)	1200V

2 440 ₽

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Бонус: 48.8 !

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Итого: 2 440 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 1200 В, 6 А (Tc) 250 Вт (Tc), поверхностный монтаж TO-263 (IXFA)

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	6A (Tc)
drain to source voltage (vdss)	1200V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	92nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	2830pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-263-3, DВІPak (2 Leads + Tab), TO-263AB
power dissipation (max)	250W (Tc)
rds on (max) @ id, vgs	2.4Ohm @ 500mA, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	HiPerFETв„ў, PolarP2в„ў ->
supplier device package	TO-263 (IXFA)
technology	MOSFET (Metal Oxide)
vgs (max)	В±30V
vgs(th) (max) @ id	5V @ 1mA

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