Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 650V 12A (Tc) 180W (Tc) поверхностный монтаж TO-263AA

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Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	12A (Tc)
drain to source voltage (vdss)	650V

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 650V 12A (Tc) 180W (Tc) поверхностный монтаж TO-263AA

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	12A (Tc)
drain to source voltage (vdss)	650V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	18.5nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	1134pF @ 25V
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-263-3, DВІPak (2 Leads + Tab), TO-263AB
power dissipation (max)	180W (Tc)
rds on (max) @ id, vgs	310mOhm @ 6A, 10V
reach status	REACH Unaffected
series	HiPerFETв„ў ->
supplier device package	TO-263AA
technology	MOSFET (Metal Oxide)
vgs (max)	В±30V
vgs(th) (max) @ id	5V @ 250ВµA

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