Name: IRL540NPBF, Trans MOSFET N-CH 100V 36A 3-Pin(3+Tab) TO-220AB Tube
SKU: IRL540NPBF

Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 100V 36A (Tc) 140W (Tc) сквозное отверстие TO-220AB

Подробное описание

Вес и габариты
base product number	IRL540 ->
continuous drain current (id) @ 25в°c	36A
current - continuous drain (id) @ 25в°c	36A (Tc)

330 ₽

– +

Бонус: 6.6 !

Бонусная программа

Итого: 330 ₽

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Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 100V 36A (Tc) 140W (Tc) сквозное отверстие TO-220AB

Вес и габариты
base product number	IRL540 ->
continuous drain current (id) @ 25в°c	36A
current - continuous drain (id) @ 25в°c	36A (Tc)
drain to source voltage (vdss)	100V
drive voltage (max rds on, min rds on)	4V, 10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	74nC @ 5V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	1800pF @ 25V
крутизна характеристики s,а/в	14
максимальное пороговое напряжение затвор-исток uзи макс.,в	2
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube
package / case	TO-220-3
power dissipation (max)	140W (Tc)
power dissipation-max (ta=25в°c)	140W
rds on - drain-source resistance	44mО© @ 18A,10V
rds on (max) @ id, vgs	44mOhm @ 18A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	HEXFETВ® ->
сопротивление канала в открытом состоянии rси вкл.,мом	44
supplier device package	TO-220AB
technology	MOSFET (Metal Oxide)
температура, с	-55…+175
transistor polarity	N Channel
vds - drain-source breakdown voltage	100V
vgs - gate-source voltage	2V @ 250uA
vgs (max)	В±16V
vgs(th) (max) @ id	2V @ 250ВµA

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