Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 100 В, 31 A (Tc), 3 Вт (Ta), 110 Вт (Tc), сквозное отверстие IPAK (TO-251)

Подробное описание

Вес и габариты
base product number	IRFU3410 ->
current - continuous drain (id) @ 25в°c	31A (Tc)
drain to source voltage (vdss)	100V

69 ₽

– +

Бонус: 1.38 !

Бонусная программа

Итого: 69 ₽

Купить

Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 100 В, 31 A (Tc), 3 Вт (Ta), 110 Вт (Tc), сквозное отверстие IPAK (TO-251)

Вес и габариты
base product number	IRFU3410 ->
current - continuous drain (id) @ 25в°c	31A (Tc)
drain to source voltage (vdss)	100V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	56nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	1690pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube
package / case	TO-251-3 Short Leads, IPak, TO-251AA
power dissipation (max)	3W (Ta), 110W (Tc)
rds on (max) @ id, vgs	39mOhm @ 18A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	HEXFETВ® ->
supplier device package	IPAK (TO-251)
technology	MOSFET (Metal Oxide)
vgs (max)	В±20V
vgs(th) (max) @ id	4V @ 250ВµA

Отзывов нет

Кнопки

IRFU3410PBF, Trans MOSFET N-CH 100V 31A 3-Pin(3+Tab) IPAK Tube