Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 100 В, 9,4 А (Tc) 48 Вт (Tc), сквозное отверстие IPAK (TO-251)

Подробное описание

Вес и габариты
base product number	IRFU120 ->
continuous drain current (id) @ 25в°c	9.4A
current - continuous drain (id) @ 25в°c	9.4A (Tc)

52 ₽

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Итого: 52 ₽

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Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 100 В, 9,4 А (Tc) 48 Вт (Tc), сквозное отверстие IPAK (TO-251)

Вес и габариты
base product number	IRFU120 ->
continuous drain current (id) @ 25в°c	9.4A
current - continuous drain (id) @ 25в°c	9.4A (Tc)
drain to source voltage (vdss)	100V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	25nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	330pF @ 25V
крутизна характеристики s,а/в	2.7
максимальное пороговое напряжение затвор-исток uзи макс.,в	4
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube
package / case	TO-251-3 Short Leads, IPak, TO-251AA
power dissipation (max)	48W (Tc)
power dissipation-max (ta=25в°c)	48W
rds on - drain-source resistance	210mО© @ 5.6A,10V
rds on (max) @ id, vgs	210mOhm @ 5.6A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	HEXFETВ® ->
сопротивление канала в открытом состоянии rси вкл.,мом	210
supplier device package	IPAK (TO-251)
technology	MOSFET (Metal Oxide)
температура, с	-55…+175
transistor polarity	N Channel
vds - drain-source breakdown voltage	100V
vgs - gate-source voltage	4V @ 250uA
vgs (max)	В±20V
vgs(th) (max) @ id	4V @ 250ВµA

Отзывов нет

Кнопки

IRFU120NPBF, Trans MOSFET N-CH 100V 9.4A 3-Pin(3+Tab) IPAK Tube