Полупроводники - Дискретные\МОП-транзисторы\Одиночные МОП-транзисторыTrans MOSFET N-CH Si 40V 362A 7-Pin(6+Tab) D2PAK T/R

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Полупроводники - Дискретные\МОП-транзисторы\Одиночные МОП-транзисторыTrans MOSFET N-CH Si 40V 362A 7-Pin(6+Tab) D2PAK T/R

Вес и габариты
automotive	No
channel mode	Enhancement
channel type	N
configuration	Single Quint Source
eccn (us)	EAR99
eu rohs	Compliant with Exemption
lead shape	Gull-wing
material	Si
maximum continuous drain current (a)	362
maximum drain source resistance (mohm)	1 10V
maximum drain source voltage (v)	40
maximum gate source leakage current (na)	100
maximum gate source voltage (v)	±20
maximum gate threshold voltage (v)	3.9
maximum idss (ua)	1
maximum operating temperature (°c)	150
maximum power dissipation (mw)	245000
minimum operating temperature (°c)	-55
mounting	Surface Mount
number of elements per chip	1
packaging	Tape and Reel
part status	Active
pcb changed	6
pin count	7
ppap	No
process technology	HEXFET
product category	Power MOSFET
standard package name	TO-263
supplier package	D2PAK
tab	Tab
typical fall time (ns)	85
typical gate charge @ 10v (nc)	210
typical gate charge @ vgs (nc)	210 10V
typical input capacitance @ vds (pf)	10250 25V
typical rise time (ns)	125
typical turn-off delay time (ns)	107
typical turn-on delay time (ns)	32
вес, г	0.16

Отзывов нет

Кнопки

IRFS7434TRL7PP, Силовой МОП-транзистор, N Канал, 40 В, 362 А, 700 мкОм, TO-263 (D2PAK), Surface Moun