Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторыкорпус: D2PAK/TO263, инфо: Транзистор полевой N-канальный 60В 120A

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180 ₽

– +

Бонус: 3.6 !

Бонусная программа

Итого: 180 ₽

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Вес и габариты
configuration	Single
factory pack quantity	800
fall time	83 ns
forward transconductance - min	210 S
height	4.4 mm
id - continuous drain current	210 A
length	10 mm
manufacturer	Infineon
maximum operating temperature	+ 175 C
minimum operating temperature	- 55 C
mounting style	SMD/SMT
number of channels	1 Channel
package / case	TO-263-3
packaging	Cut Tape or Reel
part # aliases	SP001573508
pd - power dissipation	300 W
product category	MOSFET
product type	MOSFET
qg - gate charge	120 nC
rds on - drain-source resistance	2.4 mOhms
rise time	82 ns
subcategory	MOSFETs
technology	Si
transistor polarity	N-Channel
transistor type	1 N-Channel
typical turn-off delay time	55 ns
typical turn-on delay time	19 ns
unit weight	0.139332 oz
vds - drain-source breakdown voltage	60 V
вес, г	1.8
vgs - gate-source voltage	20 V
vgs th - gate-source threshold voltage	4 V
width	9.25 mm

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