Semiconductor - Discrete > Transistors > FET - MOSFETTrans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R

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Semiconductor - Discrete > Transistors > FET - MOSFETTrans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R

Основные
pin count	3
packaging	Tape and Reel
product category	Power MOSFET
automotive	No
eu rohs	Compliant with Exemption
maximum operating temperature (°c)	150
mounting	Surface Mount
part status	Active
pcb changed	2
ppap	No
standard package name	TO-252
supplier package	DPAK
eccn (us)	EAR99
maximum power dissipation (mw)	2500
minimum operating temperature (°c)	-55
configuration	Single
Вес и габариты
number of elements per chip	1
channel type	N
tab	Tab
channel mode	Enhancement
maximum continuous drain current (a)	2
maximum drain source resistance (mohm)	4400 10V
maximum drain source voltage (v)	600
maximum gate source leakage current (na)	100
maximum gate source voltage (v)	±20
maximum gate threshold voltage (v)	4
maximum idss (ua)	100
typical fall time (ns)	25
typical gate charge @ 10v (nc)	18(Max)
typical gate charge @ vgs (nc)	18(Max)10V
typical input capacitance @ vds (pf)	350 25V
typical rise time (ns)	23
typical turn-off delay time (ns)	30
typical turn-on delay time (ns)	10
operating junction temperature (°c)	-55 to 150

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