Semiconductor - Discrete > Transistors > FET - MOSFET

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Semiconductor - Discrete > Transistors > FET - MOSFET

Основные
pin count	3
product category	Power MOSFET
automotive	No
eu rohs	Compliant with Exemption
maximum operating temperature (°c)	150
mounting	surface mount
part status	active
pcb changed	2
standard package name	TO-252
supplier package	DPAK
eccn (us)	ear99
maximum power dissipation (mw)	50000
minimum operating temperature (°c)	-55
configuration	Single
hts	8541.29.00.95
package height	2.39(Max)
package length	6.73(Max)
package width	6.22(Max)
Вес и габариты
number of elements per chip	1
channel type	P
tab	Tab
material	Si
channel mode	Enhancement
maximum continuous drain current (a)	2.7
maximum drain source resistance (mohm)	3000@10V
maximum drain source voltage (v)	250
maximum gate source leakage current (na)	100
maximum gate source voltage (v)	±20
maximum gate threshold voltage (v)	4
maximum idss (ua)	100
typical fall time (ns)	17
typical gate charge @ 10v (nc)	14(Max)
typical gate charge @ vgs (nc)	14(Max)@10V
typical input capacitance @ vds (pf)	220@25V
typical rise time (ns)	14
typical turn-off delay time (ns)	20
typical turn-on delay time (ns)	11
military	No

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IRFR9214PBF, Trans MOSFET P-CH Si 250V 2.7A 3-Pin(2+Tab) DPAK