Semiconductor - Discrete > Transistors > FET - MOSFETМОП-транзистор N-Chan 100V 7.7 Amp

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Semiconductor - Discrete > Transistors > FET - MOSFETМОП-транзистор N-Chan 100V 7.7 Amp

Основные
категория продукта	МОП-транзистор
подкатегория	MOSFETs
размер фабричной упаковки	2000
тип продукта	MOSFET
торговая марка	Vishay / Siliconix
серия	IRFR
pin count	3
packaging	Tape and Reel
product category	Power MOSFET
automotive	No
eu rohs	Compliant with Exemption
maximum operating temperature (°c)	150
mounting	Surface Mount
part status	Active
pcb changed	2
ppap	No
standard package name	TO-252
supplier package	DPAK
eccn (us)	EAR99
maximum power dissipation (mw)	2500
minimum operating temperature (°c)	-55
configuration	Single
Вес и габариты
технология	Si
number of elements per chip	1
channel type	N
tab	Tab
channel mode	Enhancement
maximum continuous drain current (a)	7.7
maximum drain source resistance (mohm)	270 10V
maximum drain source voltage (v)	100
maximum gate source leakage current (na)	100
maximum gate source voltage (v)	±20
maximum gate threshold voltage (v)	4
maximum idss (ua)	25
typical fall time (ns)	17
typical gate charge @ 10v (nc)	16(Max)
typical gate charge @ vgs (nc)	16(Max)10V
typical input capacitance @ vds (pf)	360 25V
typical rise time (ns)	27
typical turn-off delay time (ns)	18
typical turn-on delay time (ns)	6.8

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