IRFR024
Оставить отзыв
В избранноеВ сравнение
- Обзор
- Характеристики
- Отзывы (0)
- Реквизиты
N-канал 60V 14A (Tc) 2,5W (Ta), 42W (Tc) D-Pak для поверхностного монтажа
| Основные | |
| moisture sensitivity level (msl) | 1 (Unlimited) |
| mounting type | Surface Mount |
| operating temperature | -55В°C ~ 150В°C (TJ) |
| package | Tube |
| package / case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| rohs status | ROHS3 Compliant |
| eccn | EAR99 |
| htsus | 8541.29.0095 |
| supplier device package | D-Pak |
| pin count | 3 |
| product category | Power MOSFET |
| automotive | No |
| eu rohs | Compliant with Exemption |
| lead shape | Gull-wing |
| maximum operating temperature (°c) | 150 |
| mounting | Surface Mount |
| part status | Active |
| pcb changed | 2 |
| ppap | No |
| standard package name | TO-252 |
| supplier package | DPAK |
| base product number | IRFR024 -> |
| eccn (us) | EAR99 |
| maximum power dissipation (mw) | 2500 |
| minimum operating temperature (°c) | -55 |
| configuration | Single |
| process technology | HEXFET |
| Вес и габариты | |
| number of elements per chip | 1 |
| channel type | N |
| technology | MOSFET (Metal Oxide) |
| tab | Tab |
| channel mode | Enhancement |
| maximum continuous drain current (a) | 14 |
| maximum drain source resistance (mohm) | 100 10V |
| maximum drain source voltage (v) | 60 |
| maximum gate source leakage current (na) | 100 |
| maximum gate source voltage (v) | ±20 |
| maximum gate threshold voltage (v) | 4 |
| maximum idss (ua) | 25 |
| typical fall time (ns) | 42 |
| typical gate charge @ 10v (nc) | 25(Max) |
| typical gate charge @ vgs (nc) | 25(Max)10V |
| typical input capacitance @ vds (pf) | 640 25V |
| typical rise time (ns) | 58 |
| typical turn-off delay time (ns) | 25 |
| typical turn-on delay time (ns) | 13 |
| current - continuous drain (id) @ 25в°c | 14A (Tc) |
| drain to source voltage (vdss) | 60V |
| drive voltage (max rds on, min rds on) | 10V |
| fet type | N-Channel |
| gate charge (qg) (max) @ vgs | 25nC @ 10V |
| input capacitance (ciss) (max) @ vds | 640pF @ 25V |
| power dissipation (max) | 2.5W (Ta), 42W (Tc) |
| rds on (max) @ id, vgs | 100mOhm @ 8.4A, 10V |
| vgs (max) | В±20V |
| vgs(th) (max) @ id | 4V @ 250ВµA |
| operating junction temperature (°c) | -55 to 150 |
| typical output capacitance (pf) | 360 |
| maximum diode forward voltage (v) | 1.5 |
| maximum junction ambient thermal resistance on pcb (°c/w) | 50 |
| maximum positive gate source voltage (v) | 20 |
| maximum power dissipation on pcb @ tc=25°c (w) | 2.5 |
| maximum pulsed drain current @ tc=25°c (a) | 56 |
| minimum gate threshold voltage (v) | 2 |
| typical gate plateau voltage (v) | 6.1 |
| typical gate to drain charge (nc) | 11(Max) |
| typical gate to source charge (nc) | 5.8(Max) |
| typical reverse recovery charge (nc) | 290 |
| typical reverse recovery time (ns) | 88 |
| typical reverse transfer capacitance @ vds (pf) | 79 25V |
Отзывов нет
Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
![NCE3050, Транзистор MOSFET N-канал 30V 50A [TO-220]](/wa-data/public/shop/products/34/17/211734/images/243267/243267.300x0.jpg "NCE3050, Транзистор MOSFET N-канал 30V 50A [TO-220]")
![KBP210 (RS207), Диодный мост 2А 1000В [KBP]](/wa-data/public/shop/products/33/37/123733/images/155187/155187.300x0.jpg "KBP210 (RS207), Диодный мост 2А 1000В [KBP]")
