Name: IRFP064NPBF, Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-247AC Tube
SKU: IRFP064NPBF

Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 55V 110A (Tc) 200W (Tc) сквозное отверстие TO-247AC

Подробное описание

Вес и габариты
base product number	IRFP064 ->
continuous drain current (id) @ 25в°c	110A
current - continuous drain (id) @ 25в°c	110A (Tc)

220 ₽

– +

Бонус: 4.4 !

Бонусная программа

Итого: 220 ₽

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Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 55V 110A (Tc) 200W (Tc) сквозное отверстие TO-247AC

Вес и габариты
base product number	IRFP064 ->
continuous drain current (id) @ 25в°c	110A
current - continuous drain (id) @ 25в°c	110A (Tc)
drain to source voltage (vdss)	55V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	170nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	4000pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube
package / case	TO-247-3
power dissipation (max)	200W (Tc)
power dissipation-max (ta=25в°c)	200W
rds on - drain-source resistance	8mО© @ 59A,10V
rds on (max) @ id, vgs	8mOhm @ 59A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	HEXFETВ® ->
supplier device package	TO-247AC
technology	MOSFET (Metal Oxide)
transistor polarity	N Channel
vds - drain-source breakdown voltage	55V
vgs - gate-source voltage	4V @ 250uA
vgs (max)	В±20V
vgs(th) (max) @ id	4V @ 250ВµA

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