Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 250 В 790 мА (Tc) 2 Вт (Ta), 3,1 Вт (Tc) поверхностный монтаж SOT-223

Подробное описание

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®

51 ₽

– +

Бонус: 1.02 !

Бонусная программа

Итого: 51 ₽

Купить

Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 250 В 790 мА (Tc) 2 Вт (Ta), 3,1 Вт (Tc) поверхностный монтаж SOT-223

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	TO-261-4, TO-261AA
rohs status	ROHS3 Compliant
eccn	EAR99
htsus	8541.29.0095
supplier device package	SOT-223
base product number	IRFL214 ->
Вес и габариты
technology	MOSFET (Metal Oxide)
current - continuous drain (id) @ 25в°c	790mA (Tc)
drain to source voltage (vdss)	250V
drive voltage (max rds on, min rds on)	10V
fet type	N-Channel
gate charge (qg) (max) @ vgs	8.2nC @ 10V
input capacitance (ciss) (max) @ vds	140pF @ 25V
power dissipation (max)	2W (Ta), 3.1W (Tc)
rds on (max) @ id, vgs	2Ohm @ 470mA, 10V
vgs (max)	В±20V
vgs(th) (max) @ id	4V @ 250ВµA

Отзывов нет

Кнопки