Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 600 В 1,7 A (Tc) 30 Вт (Tc) сквозное отверстие TO-220-3

Подробное описание

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube

910 ₽

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Бонус: 18.2 !

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Итого: 910 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 600 В 1,7 A (Tc) 30 Вт (Tc) сквозное отверстие TO-220-3

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-220-3 Full Pack, Isolated Tab
rohs status	ROHS3 Compliant
eccn	EAR99
htsus	8541.29.0095
supplier device package	TO-220-3
base product number	IRFIBC20 ->
Вес и габариты
technology	MOSFET (Metal Oxide)
current - continuous drain (id) @ 25в°c	1.7A (Tc)
drain to source voltage (vdss)	600V
drive voltage (max rds on, min rds on)	10V
fet type	N-Channel
gate charge (qg) (max) @ vgs	18nC @ 10V
input capacitance (ciss) (max) @ vds	350pF @ 25V
power dissipation (max)	30W (Tc)
rds on (max) @ id, vgs	4.4Ohm @ 1A, 10V
vgs (max)	В±20V
vgs(th) (max) @ id	4V @ 250ВµA

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