IRFI9520GPBF, Trans MOSFET P-CH 100V 5.2A 3-Pin(3+Tab) TO-220FP
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Артикул: IRFI9520GPBF
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Diodes, Transistors and Thyristors\FET Transistors\MOSFETsTrans MOSFET P-CH 100V 5.2A 3-Pin(3+Tab) TO-220FP
| Основные | |
| moisture sensitivity level (msl) | 1 (Unlimited) |
| mounting type | Through Hole |
| operating temperature | -55В°C ~ 175В°C (TJ) |
| package | Tube |
| package / case | TO-220-3 Full Pack, Isolated Tab |
| rohs status | ROHS3 Compliant |
| eccn | EAR99 |
| htsus | 8541.29.0095 |
| supplier device package | TO-220-3 |
| pin count | 3 |
| product category | Power MOSFET |
| automotive | No |
| eu rohs | Compliant |
| lead shape | Through Hole |
| maximum operating temperature (°c) | 175 |
| mounting | Through Hole |
| part status | Active |
| pcb changed | 3 |
| ppap | No |
| standard package name | TO-220 |
| supplier package | TO-220FP |
| base product number | IRFI9520 -> |
| eccn (us) | EAR99 |
| maximum power dissipation (mw) | 37000 |
| minimum operating temperature (°c) | -55 |
| configuration | Single |
| factory pack quantity: factory pack quantity: | 1000 |
| manufacturer: | Vishay |
| maximum operating temperature: | +175 C |
| minimum operating temperature: | -55 C |
| mounting style: | Through Hole |
| product category: | MOSFET |
| product type: | MOSFET |
| series: | IRFI |
| subcategory: | MOSFETs |
| packaging: | Tube |
| Вес и габариты | |
| package/case: | TO-220-3 |
| number of elements per chip | 1 |
| channel type | P |
| pd - power dissipation: | 37 W |
| technology | MOSFET (Metal Oxide) |
| number of channels: | 1 Channel |
| tab | Tab |
| technology: | Si |
| configuration: | Single |
| channel mode | Enhancement |
| maximum continuous drain current (a) | 5.2 |
| maximum drain source resistance (mohm) | 600 10V |
| maximum drain source voltage (v) | 100 |
| maximum gate source voltage (v) | ±20 |
| typical fall time (ns) | 25 |
| typical gate charge @ 10v (nc) | 18(Max) |
| typical gate charge @ vgs (nc) | 18(Max)10V |
| typical input capacitance @ vds (pf) | 390 25V |
| typical rise time (ns) | 29 |
| typical turn-off delay time (ns) | 21 |
| typical turn-on delay time (ns) | 9.6 |
| current - continuous drain (id) @ 25в°c | 5.2A (Tc) |
| drain to source voltage (vdss) | 100V |
| drive voltage (max rds on, min rds on) | 10V |
| fet type | P-Channel |
| gate charge (qg) (max) @ vgs | 18nC @ 10V |
| input capacitance (ciss) (max) @ vds | 390pF @ 25V |
| power dissipation (max) | 37W (Tc) |
| rds on (max) @ id, vgs | 600mOhm @ 3.1A, 10V |
| vgs (max) | В±20V |
| vgs(th) (max) @ id | 4V @ 250ВµA |
| channel mode: | Enhancement |
| id - continuous drain current: | 5.2 A |
| qg - gate charge: | 18 nC |
| rds on - drain-source resistance: | 600 mOhms |
| transistor polarity: | P-Channel |
| vds - drain-source breakdown voltage: | 100 V |
| vgs - gate-source voltage: | -20 V, +20 V |
| vgs th - gate-source threshold voltage: | 4 V |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
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