IRFH5010TRPBF, транзистор полевой N канал 100В 100А PQFN5x6 (IRFH5010TRPBF) — купить

транзисторы полевые импортные

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Вес и габариты
channel mode:	Enhancement
configuration:	Single
factory pack quantity: factory pack quantity:	4000

210 ₽

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Бонус: 4.2 !

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Итого: 210 ₽

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транзисторы полевые импортные

Вес и габариты
channel mode:	Enhancement
configuration:	Single
factory pack quantity: factory pack quantity:	4000
fall time:	8.6 ns
forward transconductance - min:	206 S
id - continuous drain current:	100 A
manufacturer:	Infineon
maximum operating temperature:	+150 C
minimum operating temperature:	-55 C
mounting style:	SMD/SMT
number of channels:	1 Channel
package/case:	PQFN-8
packaging:	Reel, Cut Tape, MouseReel
part # aliases:	IRFH5010TRPBF SP001560282
pd - power dissipation:	250 W
product category:	MOSFET
product type:	MOSFET
qg - gate charge:	65 nC
rds on - drain-source resistance:	9 mOhms
rise time:	12 ns
subcategory:	MOSFETs
technology:	Si
transistor polarity:	N-Channel
transistor type:	1 N-Channel
type:	HEXFET Power MOSFET
typical turn-off delay time:	27 ns
typical turn-on delay time:	9 ns
vds - drain-source breakdown voltage:	100 V
vgs - gate-source voltage:	-20 V, +20 V
vgs th - gate-source threshold voltage:	4 V

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