Name: IRFB7437PBF, Trans MOSFET N-CH Si 40V 250A 3-Pin(3+Tab) TO-220AB Tube
SKU: IRFB7437PBF

Diodes, Transistors and Thyristors\FET Transistors\MOSFETsTrans MOSFET N-CH Si 40V 250A 3-Pin (3 Tab) TO-220AB Tube

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420 ₽

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Diodes, Transistors and Thyristors\FET Transistors\MOSFETsTrans MOSFET N-CH Si 40V 250A 3-Pin (3 Tab) TO-220AB Tube

Вес и габариты
automotive	No
channel mode	Enhancement
channel type	N
configuration	Single
continuous drain current (id) @ 25в°c	195A(Tc)
eccn (us)	EAR99
eu rohs	Compliant with Exemption
lead shape	Through Hole
material	Si
maximum continuous drain current (a)	250
maximum drain source resistance (mohm)	2 10V
maximum drain source voltage (v)	40
maximum gate source leakage current (na)	100
maximum gate source voltage (v)	±20
maximum gate threshold voltage (v)	3.9
maximum idss (ua)	1
maximum operating temperature (°c)	175
maximum power dissipation (mw)	230000
minimum operating temperature (°c)	-55
mounting	Through Hole
number of elements per chip	1
packaging	Tube
part status	Active
pcb changed	3
pin count	3
power dissipation-max (ta=25в°c)	230W(Tc)
ppap	No
process technology	HEXFET
product category	Power MOSFET
rds on - drain-source resistance	2mО© @ 100A,10V
standard package name	TO-220
supplier package	TO-220AB
tab	Tab
transistor polarity	N Channel
typical fall time (ns)	53
typical gate charge @ 10v (nc)	150
typical gate charge @ vgs (nc)	150 10V
typical input capacitance @ vds (pf)	7330 25V
typical rise time (ns)	70
typical turn-off delay time (ns)	78
typical turn-on delay time (ns)	19
vds - drain-source breakdown voltage	40V
vgs - gate-source voltage	3.9V @ 150uA

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