Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 150 В 83A (Tc) 330 Вт (Tc) сквозное отверстие TO-220AB

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330 ₽

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Итого: 330 ₽

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Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 150 В 83A (Tc) 330 Вт (Tc) сквозное отверстие TO-220AB

Вес и габариты
automotive	No
base product number	IRFB4228 ->
channel mode	Enhancement
channel type	N
configuration	Single
current - continuous drain (id) @ 25в°c	83A (Tc)
drain to source voltage (vdss)	150V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
eccn (us)	ear99
eu rohs	Compliant with Exemption
fet type	N-Channel
gate charge (qg) (max) @ vgs	107nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	4530pF @ 25V
lead shape	Through Hole
maximum continuous drain current (a)	83
maximum drain source resistance (mohm)	15 10V
maximum drain source voltage (v)	150
maximum gate source voltage (v)	±30
maximum operating temperature (°c)	175
maximum power dissipation (mw)	330000
minimum operating temperature (°c)	-40
moisture sensitivity level (msl)	1 (Unlimited)
mounting	Through Hole
mounting type	Through Hole
number of elements per chip	1
operating temperature	-40В°C ~ 175В°C (TJ)
package	Tube
package / case	TO-220-3
packaging	Tube
part status	active
pcb changed	3
pin count	3
power dissipation (max)	330W (Tc)
ppap	No
process technology	HEXFET
product category	Power MOSFET
rds on (max) @ id, vgs	15mOhm @ 33A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	HEXFETВ® ->
standard package name	TO-220
supplier device package	TO-220AB
supplier package	TO-220AB
tab	Tab
technology	MOSFET (Metal Oxide)
typical gate charge @ 10v (nc)	72
typical gate charge @ vgs (nc)	72 10V
typical input capacitance @ vds (pf)	4530 25V
vgs (max)	В±30V
vgs(th) (max) @ id	5V @ 250ВµA

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IRFB4228PBF, Trans MOSFET N-CH 150V 83A 3-Pin(3+Tab) TO-220AB Tube