Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторыкорпус: TO-220AB, инфо: Транзистор полевой N-канальный 200В 18A

Подробное описание

130 ₽

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Бонус: 2.6 !

Бонусная программа

Итого: 130 ₽

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Вес и габариты
channel mode	Enhancement
configuration	Single
factory pack quantity	1000
fall time	6.3 ns
forward transconductance - min	24 S
id - continuous drain current	18 A
manufacturer	Infineon
maximum operating temperature	+175 C
minimum operating temperature	-55 C
mounting style	Through Hole
number of channels	1 Channel
package / case	TO-220-3
packaging	Tube
part # aliases	SP001564028
pd - power dissipation	100 W
product category	MOSFET
product type	MOSFET
qg - gate charge	18 nC
rds on - drain-source resistance	100 mOhms
rise time	12 ns
subcategory	MOSFETs
technology	Si
transistor polarity	N-Channel
transistor type	1 N-Channel
typical turn-off delay time	16 ns
typical turn-on delay time	7.8 ns
vds - drain-source breakdown voltage	200 V
вес, г	2.72
vgs - gate-source voltage	20 V

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IRFB4020PBF