IRFB3407ZPBF, Силовой МОП-транзистор, N Channel, 75 В, 120 А, 0.005 Ом, TO-220, Through Hole
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Полупроводники - Дискретные\МОП-транзисторы\Одиночные МОП-транзисторыHEXFET® power MOSFET suitable for use in battery management, high speed power switching and hard switched and high frequency circuits.
• Improved gate, avalanche and dynamic dv/dt ruggedness• Fully characterized capacitance and avalanche SOA• Enhanced body diode dV/dt and dI/dt capability
• Improved gate, avalanche and dynamic dv/dt ruggedness• Fully characterized capacitance and avalanche SOA• Enhanced body diode dV/dt and dI/dt capability
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