Name: IRFB3307ZPBF, Trans MOSFET N-CH Si 75V 128A 3-Pin(3+Tab) TO-220AB Tube
SKU: IRFB3307ZPBF

Semiconductor - Discrete > Transistors > FET - MOSFETTrans MOSFET N-CH Si 75V 120A 3-Pin (3 Tab) TO-220AB Tube

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180 ₽

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Бонус: 3.6 !

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Итого: 180 ₽

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Semiconductor - Discrete > Transistors > FET - MOSFETTrans MOSFET N-CH Si 75V 120A 3-Pin (3 Tab) TO-220AB Tube

Вес и габариты
automotive	No
channel mode	Enhancement
channel type	N
configuration	Single
continuous drain current (id) @ 25в°c	120A
eccn (us)	EAR99
eu rohs	Compliant with Exemption
lead shape	Through Hole
material	Si
maximum continuous drain current (a)	120
maximum drain source resistance (mohm)	5.8 10V
maximum drain source voltage (v)	75
maximum gate source voltage (v)	±20
maximum operating temperature (°c)	175
maximum power dissipation (mw)	230000
minimum operating temperature (°c)	-55
mounting	Through Hole
number of elements per chip	1
packaging	Tube
part status	Active
pcb changed	3
pin count	3
power dissipation-max (ta=25в°c)	230W
ppap	No
process technology	HEXFET
product category	Power MOSFET
rds on - drain-source resistance	5.8mО© @ 75A,10V
standard package name	TO-220
supplier package	TO-220AB
tab	Tab
transistor polarity	N Channel
typical fall time (ns)	65
typical gate charge @ 10v (nc)	79
typical gate charge @ vgs (nc)	79 10V
typical input capacitance @ vds (pf)	4750 50V
typical rise time (ns)	64
typical turn-off delay time (ns)	38
typical turn-on delay time (ns)	15
vds - drain-source breakdown voltage	75V
vgs - gate-source voltage	4V @ 150uA

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