Semiconductor - Discrete > Transistors > FET - MOSFETP-канал 100V 4A (Tc) 43W (Tc) сквозное отверстие TO-220AB

Подробное описание

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube

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Semiconductor - Discrete > Transistors > FET - MOSFETP-канал 100V 4A (Tc) 43W (Tc) сквозное отверстие TO-220AB

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube
package / case	TO-220-3
rohs status	ROHS3 Compliant
eccn	EAR99
htsus	8541.29.0095
supplier device package	TO-220AB
base product number	IRF9510 ->
Вес и габариты
technology	MOSFET (Metal Oxide)
other related documents	http://www.vishay.com/docs/88869/packaging.pdf
current - continuous drain (id) @ 25в°c	4A (Tc)
drain to source voltage (vdss)	100V
drive voltage (max rds on, min rds on)	10V
fet type	P-Channel
gate charge (qg) (max) @ vgs	8.7nC @ 10V
input capacitance (ciss) (max) @ vds	200pF @ 25V
power dissipation (max)	43W (Tc)
rds on (max) @ id, vgs	1.2Ohm @ 2.4A, 10V
vgs (max)	В±20V
vgs(th) (max) @ id	4V @ 250ВµA

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