Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал, 500 В, 5,3 А (Tc), 104 Вт (Tc), сквозное отверстие, TO-220AB

Подробное описание

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube

310 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал, 500 В, 5,3 А (Tc), 104 Вт (Tc), сквозное отверстие, TO-220AB

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-220-3
rohs status	ROHS3 Compliant
eccn	EAR99
htsus	8541.29.0095
supplier device package	TO-220AB
base product number	IRF830 ->
Вес и габариты
technology	MOSFET (Metal Oxide)
current - continuous drain (id) @ 25в°c	5.3A (Tc)
drain to source voltage (vdss)	500V
drive voltage (max rds on, min rds on)	10V
fet type	N-Channel
gate charge (qg) (max) @ vgs	20nC @ 10V
input capacitance (ciss) (max) @ vds	325pF @ 100V
power dissipation (max)	104W (Tc)
rds on (max) @ id, vgs	1.5Ohm @ 2.5A, 10V
vgs (max)	В±30V
vgs(th) (max) @ id	5V @ 250ВµA

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