Name: IRF8302MTRPBF, Силовой МОП-транзистор, N Канал, 30 В, 190 А, 0.0014 Ом, WDSON, Surface Mount
SKU: IRF8302MTRPBF

Trans MOSFET N-CH 30V 31A 7-Pin Direct-FET MX T/R

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610 ₽

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Бонус: 12.2 !

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Trans MOSFET N-CH 30V 31A 7-Pin Direct-FET MX T/R

Вес и габариты
automotive	No
channel mode	Enhancement
channel type	N
configuration	Single Quad Drain Dual Source
eccn (us)	ear99
eu rohs	compliant
lead shape	no lead
maximum continuous drain current (a)	31
maximum drain source resistance (mohm)	1.8 10V
maximum drain source voltage (v)	30
maximum gate source leakage current (na)	100
maximum gate source voltage (v)	±20
maximum gate threshold voltage (v)	2.35
maximum idss (ua)	100
maximum operating temperature (°c)	150
maximum power dissipation (mw)	2800
minimum operating temperature (°c)	-40
mounting	surface mount
number of elements per chip	1
packaging	Tape and Reel
part status	active
pcb changed	7
pin count	7
ppap	No
process technology	HEXFET
product category	Power MOSFET
supplier package	Direct-FET MX
typical fall time (ns)	15
typical gate charge @ vgs (nc)	35 4.5V
typical input capacitance @ vds (pf)	6030 15V
typical rise time (ns)	37
typical turn-off delay time (ns)	20
typical turn-on delay time (ns)	22
вес, г	0.3

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