IRF624PBF-BE3

N-канал 250V 4.4A (Tc) 50W (Tc) сквозное отверстие TO-220AB

Подробное описание

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube

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N-канал 250V 4.4A (Tc) 50W (Tc) сквозное отверстие TO-220AB

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-220-3
eccn	EAR99
htsus	8541.29.0095
supplier device package	TO-220AB
factory pack quantity: factory pack quantity:	1000
manufacturer:	Vishay
maximum operating temperature:	+150 C
minimum operating temperature:	-55 C
mounting style:	Through Hole
product category:	MOSFET
product type:	MOSFET
series:	IRF
subcategory:	MOSFETs
packaging:	Tube
part # aliases:	IRF624PBF
Вес и габариты
package/case:	TO-220AB-3
pd - power dissipation:	50 W
technology	MOSFET (Metal Oxide)
number of channels:	1 Channel
technology:	Si
configuration:	Single
current - continuous drain (id) @ 25в°c	4.4A (Tc)
drain to source voltage (vdss)	250V
fet type	N-Channel
gate charge (qg) (max) @ vgs	14nC @ 10V
input capacitance (ciss) (max) @ vds	260pF @ 25V
power dissipation (max)	50W (Tc)
rds on (max) @ id, vgs	1.1Ohm @ 2.6A, 10V
vgs (max)	В±20V
vgs(th) (max) @ id	4V @ 250ВµA
channel mode:	Enhancement
id - continuous drain current:	4.4 A
qg - gate charge:	14 nC
rds on - drain-source resistance:	1.1 Ohms
transistor polarity:	N-Channel
transistor type:	1 N-Channel
vds - drain-source breakdown voltage:	250 V
vgs - gate-source voltage:	-20 V, +20 V
vgs th - gate-source threshold voltage:	4 V
typical turn-off delay time:	20 ns
typical turn-on delay time:	7 ns
fall time:	12 ns
rise time:	13 ns

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