Name: IRF540NLPBF, Trans MOSFET N-CH Si 100V 33A 3-Pin(3+Tab) TO-262 Tube
SKU: IRF540NLPBF

Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 100V 33A (Tc) 130W (Tc) сквозное отверстие TO-262

Подробное описание

Вес и габариты
base product number	IRF540 ->
current - continuous drain (id) @ 25в°c	33A (Tc)
drain to source voltage (vdss)	100V

110 ₽

– +

Бонус: 2.2 !

Бонусная программа

Итого: 110 ₽

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Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 100V 33A (Tc) 130W (Tc) сквозное отверстие TO-262

Вес и габариты
base product number	IRF540 ->
current - continuous drain (id) @ 25в°c	33A (Tc)
drain to source voltage (vdss)	100V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	71nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	1960pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube
package / case	TO-262-3 Long Leads, IВІPak, TO-262AA
power dissipation (max)	130W (Tc)
rds on (max) @ id, vgs	44mOhm @ 16A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	HEXFETВ® ->
supplier device package	TO-262
technology	MOSFET (Metal Oxide)
vgs (max)	В±20V
vgs(th) (max) @ id	4V @ 250ВµA

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