IRF5305STRLPBF, Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R

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Артикул: IRF5305STRLPBF
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge.
Вес и габариты
channel modeEnhancement
channel typeP
configurationSingle
460
+
Бонус: 9.2 !
Бонусная программа
Итого: 460
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Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge.
Вес и габариты
channel modeEnhancement
channel typeP
configurationSingle
factory pack quantity800
id - continuous drain current31 A
manufacturerInfineon
maximum continuous drain current31 A
maximum drain source resistance60 mΩ
maximum drain source voltage55 V
maximum gate source voltage-20 V, +20 V
maximum gate threshold voltage4V
maximum operating temperature+175 C
maximum power dissipation110 W
minimum gate threshold voltage2V
minimum operating temperature-55 C
mounting styleSMD/SMT
mounting typeSurface Mount
number of channels1 Channel
number of elements per chip1
package / caseTO-252-3
package typeD2PAK(TO-263)
packagingCut Tape or Reel
part # aliasesSP001564840
pd - power dissipation110 W
pin count3
product categoryMOSFET
product typeMOSFET
qg - gate charge42 nC
rds on - drain-source resistance60 mOhms
seriesHEXFET
subcategoryMOSFETs
technologySi
transistor configurationSingle
transistor materialSi
transistor polarityP-Channel
transistor type1 P-Channel
typical gate charge @ vgs63 nC 10 V
vds - drain-source breakdown voltage55 V
vgs - gate-source voltage20 V
width9.65mm
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