IRF4104SPBF, Транзистор MOSFET N-канал Si 40В 120А [D2-PАK]
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![IRF4104SPBF, Транзистор MOSFET N-канал Si 40В 120А [D2-PАK]](/wa-data/public/shop/products/34/29/192934/images/227672/227672.970.jpg "IRF4104SPBF, Транзистор MOSFET N-канал Si 40В 120А [D2-PАK]")
![IRF4104SPBF, Транзистор MOSFET N-канал Si 40В 120А [D2-PАK]](/wa-data/public/shop/products/34/29/192934/images/227673/227673.970.jpg "IRF4104SPBF, Транзистор MOSFET N-канал Si 40В 120А [D2-PАK]")
![IRF4104SPBF, Транзистор MOSFET N-канал Si 40В 120А [D2-PАK]](/wa-data/public/shop/products/34/29/192934/images/227674/227674.970.jpg "IRF4104SPBF, Транзистор MOSFET N-канал Si 40В 120А [D2-PАK]")
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The IRF4104SPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
• Advanced process technology• Repetitive avalanche allowed up to Tjmax
• Advanced process technology• Repetitive avalanche allowed up to Tjmax
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