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Semiconductor - Discrete > Transistors > FET - MOSFETThe IRF4104SPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
• Advanced process technology• Repetitive avalanche allowed up to Tjmax
• Advanced process technology• Repetitive avalanche allowed up to Tjmax
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