Name: IRF2805PBF, Trans MOSFET N-CH Si 55V 75A 3-Pin(3+Tab) TO-220AB Tube
SKU: IRF2805PBF

Semiconductor - Discrete > Transistors > FET - MOSFETTrans MOSFET N-CH Si 55V 75A 3-Pin(3+Tab) TO-220AB Tube

Подробное описание

180 ₽

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Бонус: 3.6 !

Бонусная программа

Итого: 180 ₽

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Semiconductor - Discrete > Transistors > FET - MOSFETTrans MOSFET N-CH Si 55V 75A 3-Pin(3+Tab) TO-220AB Tube

Вес и габариты
automotive	No
channel mode	Enhancement
channel type	N
configuration	Single
eccn (us)	EAR99
eu rohs	Compliant with Exemption
lead shape	Through Hole
material	Si
maximum continuous drain current (a)	75
maximum drain source resistance (mohm)	4.7 10V
maximum drain source voltage (v)	55
maximum gate source voltage (v)	±20
maximum operating temperature (°c)	175
maximum power dissipation (mw)	330000
minimum operating temperature (°c)	-55
mounting	Through Hole
number of elements per chip	1
packaging	Tube
part status	Active
pcb changed	3
pin count	3
ppap	No
process technology	HEXFET
product category	Power MOSFET
standard package name	TO-220
supplier package	TO-220AB
tab	Tab
typical fall time (ns)	110
typical gate charge @ 10v (nc)	150
typical gate charge @ vgs (nc)	150 10V
typical input capacitance @ vds (pf)	5110 25V
typical rise time (ns)	120
typical turn-off delay time (ns)	68
typical turn-on delay time (ns)	14

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