IRF100S201
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Trans MOSFET N-CH 100V 192A 3-Pin(2+Tab) D2PAK T/R
| Вес и габариты | |
| automotive | No |
| channel mode | Enhancement |
| channel type | N |
| configuration | Single |
| continuous drain current (id) @ 25в°c | 192A(Tc) |
| eccn (us) | EAR99 |
| eu rohs | Compliant with Exemption |
| lead shape | Gull-wing |
| maximum continuous drain current (a) | 192 |
| maximum diode forward voltage (v) | 1.3 |
| maximum drain source resistance (mohm) | 4.2 10V |
| maximum drain source voltage (v) | 100 |
| maximum gate source leakage current (na) | 100 |
| maximum gate source voltage (v) | ±20 |
| maximum gate threshold voltage (v) | 4 |
| maximum idss (ua) | 20 |
| maximum junction ambient thermal resistance on pcb (°c/w) | 40 |
| maximum operating temperature (°c) | 175 |
| maximum positive gate source voltage (v) | 20 |
| maximum power dissipation (mw) | 441000 |
| maximum pulsed drain current @ tc=25°c (a) | 690 |
| minimum gate threshold voltage (v) | 2 |
| minimum operating temperature (°c) | -55 |
| mounting | Surface Mount |
| number of elements per chip | 1 |
| operating junction temperature (°c) | -55 to 175 |
| packaging | Tape and Reel |
| part status | Active |
| pcb changed | 2 |
| pin count | 3 |
| power dissipation-max (ta=25в°c) | 441W(Tc) |
| ppap | No |
| process technology | HEXFET |
| product category | Power MOSFET |
| rds on - drain-source resistance | 4.2mО© @ 115A,10V |
| standard package name | TO-263 |
| supplier package | D2PAK |
| tab | Tab |
| transistor polarity | N Channel |
| typical fall time (ns) | 100 |
| typical gate charge @ 10v (nc) | 170 |
| typical gate charge @ vgs (nc) | 170 10V |
| typical gate plateau voltage (v) | 4.4 |
| typical gate to drain charge (nc) | 45 |
| typical gate to source charge (nc) | 46 |
| typical input capacitance @ vds (pf) | 9500 50V |
| typical output capacitance (pf) | 660 |
| typical reverse recovery charge (nc) | 90 |
| typical reverse recovery time (ns) | 47 |
| typical reverse transfer capacitance @ vds (pf) | 310 50V |
| typical rise time (ns) | 97 |
| typical turn-off delay time (ns) | 110 |
| typical turn-on delay time (ns) | 17 |
| vds - drain-source breakdown voltage | 100V |
| vgs - gate-source voltage | 4V @ 250uA |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26