Name: IPW60R125C6FKSA1, Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247 Tube
SKU: IPW60R125C6FKSA1

Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 600V 30A (Tc) 219W (Tc) сквозное отверстие PG-TO247-3

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530 ₽

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Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 600V 30A (Tc) 219W (Tc) сквозное отверстие PG-TO247-3

Вес и габариты
base product number	IPW60R125 ->
channel mode	Enhancement
configuration	Single
current - continuous drain (id) @ 25в°c	30A (Tc)
drain to source voltage (vdss)	600V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
factory pack quantity	240
fall time	7 ns
fet type	N-Channel
gate charge (qg) (max) @ vgs	96nC @ 10V
htsus	8541.29.0095
id - continuous drain current	30 A
input capacitance (ciss) (max) @ vds	2127pF @ 100V
manufacturer	Infineon
maximum operating temperature	+150 C
minimum operating temperature	-55 C
moisture sensitivity level (msl)	1 (Unlimited)
mounting style	Through Hole
mounting type	Through Hole
number of channels	1 Channel
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-247-3
packaging	Tube
part # aliases	IPW60R125C6FKSA1 IPW6R125C6XK SP000641912
pd - power dissipation	219 W
power dissipation (max)	219W (Tc)
product category	MOSFET
product type	MOSFET
qg - gate charge	96 nC
rds on - drain-source resistance	110 mOhms
rds on (max) @ id, vgs	125mOhm @ 14.5A, 10V
reach status	REACH Unaffected
rise time	12 ns
rohs status	ROHS3 Compliant
series	CoolMOSв„ў ->
subcategory	MOSFETs
supplier device package	PG-TO247-3
technology	MOSFET (Metal Oxide)
tradename	CoolMOS
transistor polarity	N-Channel
transistor type	1 N-Channel
typical turn-off delay time	83 ns
typical turn-on delay time	15 ns
vds - drain-source breakdown voltage	600 V
vgs - gate-source voltage	20 V
vgs (max)	В±20V
vgs th - gate-source threshold voltage	2.5 V
vgs(th) (max) @ id	3.5V @ 960ВµA

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