IPW60R017C7XKSA1, Силовой МОП-транзистор, N Channel, 600 В, 109 А, 0.015 Ом, TO-247, Through Hole
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Полупроводники - Дискретные\МОП-транзисторы\Одиночные МОП-транзисторы600V CoolMOS™ C7 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle suitable for use in PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. computing, server, telecom, UPS and solar.
• Suitable for hard and soft switching (PFC and high performance LLC)• Increased MOSFET dv/dt ruggedness to 120V/ns• Increased efficiency due to best in class FOMRDS(on)*Eoss and RDS(on)*Qg• Best in class RDS(on)/package• Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)• Increased economies of scale by use in PFC and PWM topologies in the application• Higher dv/dt limit enables faster switching leading to higher efficiency• Enabling higher system efficiency by lower switching losses• Increased power density solutions due to smaller packages• Higher switching frequencies possible without loss in efficiency due to low Eoss and Q
• Suitable for hard and soft switching (PFC and high performance LLC)• Increased MOSFET dv/dt ruggedness to 120V/ns• Increased efficiency due to best in class FOMRDS(on)*Eoss and RDS(on)*Qg• Best in class RDS(on)/package• Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)• Increased economies of scale by use in PFC and PWM topologies in the application• Higher dv/dt limit enables faster switching leading to higher efficiency• Enabling higher system efficiency by lower switching losses• Increased power density solutions due to smaller packages• Higher switching frequencies possible without loss in efficiency due to low Eoss and Q
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