Name: IPP60R099CPXKSA1, Trans MOSFET N-CH 650V 31A 3-Pin(3+Tab) TO-220 Tube
SKU: IPP60R099CPXKSA1

Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 650V 31A (Tc) 255W (Tc) сквозное отверстие PG-TO220-3

Подробное описание

Вес и габариты
base product number	IPP60R099 ->
current - continuous drain (id) @ 25в°c	31A (Tc)
drain to source voltage (vdss)	650V

840 ₽

– +

Бонус: 16.8 !

Бонусная программа

Итого: 840 ₽

Купить

Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 650V 31A (Tc) 255W (Tc) сквозное отверстие PG-TO220-3

Вес и габариты
base product number	IPP60R099 ->
current - continuous drain (id) @ 25в°c	31A (Tc)
drain to source voltage (vdss)	650V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	80nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	2800pF @ 100V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-220-3
power dissipation (max)	255W (Tc)
rds on (max) @ id, vgs	99mOhm @ 18A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	CoolMOSв„ў ->
supplier device package	PG-TO220-3
technology	MOSFET (Metal Oxide)
vgs (max)	В±20V
vgs(th) (max) @ id	3.5V @ 1.2mA

Отзывов нет

Кнопки